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20 p, 736.9 KB |
Radio frequency performance projection and stability tradeoff of h-BN encapsulated graphene field-effect transistors
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Feijoo, Pedro Carlos (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ;
Pasadas, Francisco (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ;
Iglesias, José M. (Universidad de Salamanca. Departamento de Física Aplicada) ;
Hamham, El Mokhtar (Universidad de Salamanca. Departamento de Física Aplicada) ;
Rengel, Raul (Universidad de Salamanca. Departamento de Física Aplicada) ;
Jiménez Jiménez, David (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
Hexagonal boron nitride encapsulation significantly improves carrier transport in graphene. This paper investigates the benefit of implementing the encapsulation technique in graphene field-effect transistors (GFETs) in terms of their intrinsic radio frequency (RF) performance, adding the effect of the series resistances at the terminals. [...]
2019 -  10.1109/TED.2018.2890192
IEEE Transactions on Electron Devices, Vol. 66, Issue 3 (March 2019) , p. 1567-1573
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Determination of the time constant distribution of a defect-centric time-dependent variability model for Sub-100-nm FETs
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Saraza-Canflanca, Pablo (Instituto de Microelectrónica de Sevilla) ;
Castro-Lopez, Rafael (Instituto de Microelectrónica de Sevilla) ;
Roca, Elisenda (Instituto de Microelectrónica de Sevilla) ;
Martin Martinez, Javier (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ;
Rodríguez Martínez, Rosana (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ;
Nafría i Maqueda, Montserrat (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ;
Fernandez, Francisco V. (Instituto de Microelectrónica de Sevilla)
The origin of some time-dependent variability phenomena in FET technologies has been attributed to the charge carrier trapping/detrapping activity of individual defects present in devices. Although some models have been presented to describe these phenomena from the so-called defect-centric perspective, limited attention has been paid to the complex process that goes from the experimental data of the phenomena up to the final construction of the model and all its components, specifically the one that pertains to the time constant distribution. [...]
2022 - 10.1109/TED.2022.3198383
IEEE Transactions on Electron Devices, Vol. 69, issue 10 (Oct. 2022) , p. 5424-5429
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7 p, 481.4 KB |
Experimental time evolution study of the HfO2-based IMPLY gate operation
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Maestro Izquierdo, Marcos (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ;
Martin Martinez, Javier (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ;
Crespo Yepes, Albert (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ;
Escudero, Manel (Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica) ;
Rodríguez Martínez, Rosana (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ;
Nafría i Maqueda, Montserrat (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ;
Aymerich Humet, Xavier (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ;
Rubio, Antonio 1954- (Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica)
In the last years, memristor devices have been proposed as key elements to develop a new paradigm to implement logic gates. In particular, the memristor-based material implication (IMPLY) gate has been presented as a potential powerful basis for logic applications. [...]
2018 - 10.1109/TED.2017.2778315
IEEE Transactions on Electron Devices, Vol. 65, issue 2 (Feb. 2018) , p. 404-410
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8 p, 666.7 KB |
Statistical characterization of time-dependent variability defects using the maximum current fluctuation
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Saraza-Canflanca, Pablo (Instituto de Microelectrónica de Sevilla) ;
Martin Martinez, Javier (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ;
Castro-Lopez, Rafael (Instituto de Microelectrónica de Sevilla) ;
Roca, Elisenda (Instituto de Microelectrónica de Sevilla) ;
Rodríguez Martínez, Rosana (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ;
Fernandez, Francisco V. (Instituto de Microelectrónica de Sevilla) ;
Nafría i Maqueda, Montserrat (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
This article presents a new methodology to extract, at a given operation condition, the statistical distribution of the number of active defects that contribute to the observed device time-dependent variability, as well as their amplitude distribution. [...]
2021 - 10.1109/ted.2021.3086448
IEEE Transactions on Electron Devices, Vol. 68, issue 8 (Aug. 2021) , p. 4039-4044
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8 p, 2.6 MB |
Low-frequency noise parameter extraction method for single-layer graphene FETs
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Mavredakis, Nikolaos (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ;
Wei, Wei (Université de Lille. Institute of Electronics, Microelectronics and Nanotechnology) ;
Pallecchi, Emiliano (Université de Lille. Institute of Electronics, Microelectronics and Nanotechnology) ;
Vignaud, Dominique (Université de Lille. Institute of Electronics, Microelectronics and Nanotechnology) ;
Happy, Henri (Université de Lille. Institute of Electronics, Microelectronics and Nanotechnology) ;
Garcia Cortadella, Ramon (Institut Català de Nanociència i Nanotecnologia) ;
Schaefer, Nathan (Institut Català de Nanociència i Nanotecnologia) ;
Bonaccini Calia, Andrea (Institut Català de Nanociència i Nanotecnologia) ;
Garrido, Jose (Institut Català de Nanociència i Nanotecnologia) ;
Jiménez Jiménez, David (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
In this article, a detailed parameter extraction methodology is proposed for low-frequency noise (LFN) in single-layer (SL) graphene transistors (GFETs) based on a recently established compact LFN model. [...]
2020 - 10.1109/TED.2020.2978215
IEEE transactions on electron devices, Vol. 67, issue 5 (May 2020) , p. 2093-2099
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7 p, 2.6 MB |
A First Evaluation of Thick Oxide 3C-SiC MOS Capacitors Reliability
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Li, Fan (University of Warwick) ;
Mawby, Philip A. (University of Warwick) ;
Song, Qiu (University of Warwick) ;
Perez-Tomas, Amador (Institut Català de Nanociència i Nanotecnologia) ;
Shah, Vishal (University of Warwick) ;
Sharma, Yogesh (Dynex Semiconductor Ltd.) ;
Hamilton, Dean P. (De Montfort University) ;
Fisher, Craig (University of Warwick) ;
Gammon, Peter (University of Warwick) ;
Jennings, M. R. (Swansea University)
Despite the recent advances in 3C-SiC technology, there is a lack of statistical analysis on the reliability of SiO layers on 3C-SiC, which is crucial in power MOS device developments. This article presents a comprehensive study of the medium-and long-term time-dependent dielectric breakdowns (TDDBs) of 65-nm-thick SiO layers thermally grown on a state-of-the-art 3C-SiC/Si wafer. [...]
2020 - 10.1109/TED.2019.2954911
IEEE transactions on electron devices, Vol. 67, Issue 1 (January 2020) , p. 237-242
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8 p, 3.6 MB |
Study on the Connection Between the Set Transient in RRAMs and the Progressive Breakdown of Thin Oxides
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Aguirre, Fernando Leonel (Universidad Tecnológica Nacional (Buenos Aires, Argentina)) ;
Rodríguez Fernández, Alberto (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ;
Pazos, Sebastián Matías (Universidad Tecnológica Nacional (Buenos Aires, Argentina)) ;
Suñé, Jordi, 1963- (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ;
Miranda, Enrique (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ;
Palumbo, Félix (Universidad Tecnológica Nacional (Buenos Aires, Argentina))
In this paper, the transition rate (TR) from the high-resistance state to the low-resistance state of a HfO-based resistive random access memory (RRAM) is investigated. The TR is statistically characterized by applying constant voltage stresses in the range from 0. [...]
2019 - 10.1109/TED.2019.2922555
IEEE transactions on electron devices, Vol. 66, Issue 8 (August 2019) , p. 3349-3355
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16 p, 2.3 MB |
Current Status and Opportunities of Organic Thin-Film Transistor Technologies
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Guo, Xiaojun (Shanghai Jiao Tong University) ;
Xu, Yong (Dongguk University (Seül)) ;
Ogier, Simon (NeuDrive Limited) ;
Nga Ng, Tse (University of California) ;
Caironi, Mario (Center for Nano Science and Technology@PoliMi (Milà, Itàlia)) ;
Perinot, Andrea (Center for Nano Science and Technology@PoliMi (Milà, Itàlia)) ;
Li, Ling (Chinese Academy of Sciences) ;
Zhao, Jiaqing (Shanghai Jiao Tong University) ;
Tang, Wei (Shanghai Jiao Tong University) ;
Sporea, Radu A. (University of Surrey) ;
Nejim, Ahmed (Silvaco Europe Ltd) ;
Carrabina Bordoll, Jordi (Universitat Autònoma de Barcelona. Departament de Microelectrònica i Sistemes Electrònics) ;
Cain, Paul (FlexEnable Ltd.) ;
Yan, Feng (The Hong Kong Polytechnic University)
Attributed to its advantages of super mechanical flexibility, very low-temperature processing, and compatibility with low cost and high throughput manufacturing, organic thin-film transistor (OTFT) technology is able to bring electrical, mechanical, and industrial benefits to a wide range of new applications by activating nonflat surfaces with flexible displays, sensors, and other electronic functions. [...]
2017 - 10.1109/TED.2017.2677086
IEEE transactions on electron devices, Vol. 64, Num. 5 (2017) , p. 1906-1921
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